2N5643
SEMITRONICS CORP
- Lifecycle statusContact Mfr
- DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountNO
- Number of Elements1
- Qualification StatusNot Qualified
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)5
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)5 A
- Power Dissipation-Max (Abs)60 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max35 V
- Transition Frequency-Nom (fT)200 MHz
- Collector-base Capacitance-Max65 pF
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2N5643
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2N5643