2N5642 by ASI Semiconductor, Inc. | Sourcengine

ASI Semiconductor, Inc. 2N5642

Lifecycle status
Active
Description
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
Category
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-CRPM-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
5
Power Dissipation-Max (W)
30
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
3
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
35
Collector-base Capacitance-Max (pF)
35
Transition Frequency-Nom (fT) (MHz)
250