2N5457 by MICRO ELECTRONICS LTD | Sourcengine

MICRO ELECTRONICS LTD 2N5457

Lifecycle status
Discontinued
Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET
Category
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-PBCY-T3
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.025 A
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
3 pF
DS Breakdown Voltage-Min
25 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
0.31 W
Transistor Element Material
SILICON