2N5102 by ASI Semiconductor, Inc. | Sourcengine

ASI Semiconductor, Inc. 2N5102

Lifecycle status
Active
Description
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
Category
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-XUPM-W3
Configuration
SINGLE
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
WIRE
Case Connection
EMITTER
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
10
Power Dissipation-Max (W)
70
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
3.3
Operating Temperature-Max (Cel)
175
Collector-base Capacitance-Max (pF)
85
Transition Frequency-Nom (fT) (MHz)
150