2N5014
Microsemi Corporation
- Lifecycle statusContact Mfr
- DescriptionBipolar Transistors - BJT Power BJT
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-5
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- Terminal FinishTIN LEAD
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)30
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)0.2 A
- Power Dissipation-Max (Abs)7 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max900 V
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2N5014