2N4440
RAYTHEON SEMICONDUCTOR
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-60
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MUPM-P3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-60
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)10
- Operating Temperature-Max175 Cel
- Collector Current-Max (IC)1.5 A
- Power Dissipation-Max (Abs)11 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max40 V
- Transition Frequency-Nom (fT)400 MHz
- Collector-base Capacitance-Max12 pF
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2N4440
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2N4440