2N4398
NEW ENGLAND SEMICONDUCTOR
- Lifecycle statusTransferred
- DescriptionPower Bipolar Transistor, 30A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeO-MBFM-P2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-3
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- J-STD-609 Codee0
- VCEsat-Max (V)2
- Case ConnectionCOLLECTOR
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals2
- Package Body MaterialMETAL
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)15
- Power Dissipation-Max (W)5
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)400
- Turn-off Time-Max (toff) (ns)2100
- Collector Current-Max (IC) (A)30
- Operating Temperature-Max (Cel)175
- Collector-emitter Voltage-Max (V)40
- Power Dissipation Ambient-Max (W)200
- Transition Frequency-Nom (fT) (MHz)4
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2N4398