2N3646 by GENERAL DIODE CORP | Sourcengine

GENERAL DIODE CORP 2N3646

Lifecycle status
Discontinued
Description
RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, NPN, TO-106
Category
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-XBCY-W4
Configuration
SINGLE
JEDEC-95 Code
TO-106
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
J-STD-609 Code
e0
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
0.2
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.2
Operating Temperature-Max (Cel)
125
Collector-emitter Voltage-Max (V)
15
Collector-base Capacitance-Max (pF)
5
Transition Frequency-Nom (fT) (MHz)
350