2N3636UBN by VPT COMPONENTS | Sourcengine

VPT COMPONENTS 2N3636UBN

Lifecycle status
Active
Description
Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon
Category
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

Application
SWITCHING
JESD-30 Code
R-XDSO-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
VCEsat-Max (V)
0.6
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
0.5
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
200
Turn-off Time-Max (toff) (ns)
650
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
175
Power Dissipation Ambient-Max (W)
0.5
Collector-base Capacitance-Max (pF)
10