2N3634UB by Microsemi Corporation | Sourcengine

Microsemi Corporation 2N3634UB

Lifecycle status
Transferred
Description
Power Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin
Category
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-CDSO-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
VCEsat-Max (V)
0.6
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
1.5
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
140
Power Dissipation Ambient-Max (W)
1
Collector-base Capacitance-Max (pF)
10