2N3010
RAYTHEON SEMICONDUCTOR
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, TO-18
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-18
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- Transistor ApplicationSWITCHING
- DC Current Gain-Min (hFE)25
- Operating Temperature-Max175 Cel
- Collector Current-Max (IC)0.05 A
- Power Dissipation-Max (Abs)0.3 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max6 V
- Transition Frequency-Nom (fT)600 MHz
- Collector-base Capacitance-Max3 pF
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2N3010
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2N3010