2N2892
NEW ENGLAND SEMICONDUCTOR
- Lifecycle statusTransferred
- DescriptionPower Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeO-MUPM-D3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-111
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormSOLDER LUG
- VCEsat-Max (V)0.75
- Case ConnectionCOLLECTOR
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)30
- Power Dissipation-Max (W)30
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)300
- Turn-off Time-Max (toff) (ns)1500
- Collector Current-Max (IC) (A)5
- Operating Temperature-Max (Cel)175
- Collector-emitter Voltage-Max (V)80
- Power Dissipation Ambient-Max (W)17
- Transition Frequency-Nom (fT) (MHz)30
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2N2892
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2N2892