2N2857UBJS by SEMICOA | Sourcengine

SEMICOA 2N2857UBJS

Lifecycle status
Contact Mfr
Description
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Category
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

JESD-30 Code
R-CDSO-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
VCEsat-Max (V)
0.4
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
12.5
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
0.3
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.04
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
15
Power Dissipation Ambient-Max (W)
0.2
Collector-base Capacitance-Max (pF)
1
Screening Level / Reference Standard
MIL-PRF-19500; MIL-STD-750