2MBI200L-120
Fuji Electric Co., Ltd.
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max3.5 V
- JESD-30 CodeR-XUFM-X7
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Terminal PositionUPPER
- Additional FeatureHIGH SPEED SWITCHING
- Fall Time-Max (tf)500 ns
- Number of Elements2
- Number of Terminals7
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Gate-emitter Voltage-Max20 V
- Collector Current-Max (IC)200 A
- Power Dissipation-Max (Abs)1600 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
- Power Dissipation Ambient-Max3200 W
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2MBI200L-120