2MBI100-120
Fuji Electric Co., Ltd.
- Lifecycle statusContact Mfr
- DescriptionInsulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max5 V
- Number of Elements2
- Gate-emitter Voltage-Max6 V
- Collector Current-Max (IC)100 A
- Power Dissipation-Max (Abs)800 W
- Collector-emitter Voltage-Max1200 V
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2MBI100-120
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2MBI100-120