2DI150Z-100
Fuji Electric Co., Ltd.
- Lifecycle statusDiscontinued
- DescriptionPower Bipolar Transistor, 150A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max2.8 V
- JESD-30 CodeR-XUFM-X3
- ConfigurationCOMPLEX
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Terminal PositionUPPER
- Fall Time-Max (tf)2000 ns
- Number of Elements2
- Rise Time-Max (tr)2500 ns
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeNPN
- Transistor ApplicationSWITCHING
- Turn-on Time-Max (ton)2500 ns
- Turn-off Time-Max (toff)14000 ns
- DC Current Gain-Min (hFE)100
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)150 A
- Power Dissipation-Max (Abs)1000 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1000 V
- Power Dissipation Ambient-Max1000 W
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2DI150Z-100