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28C04F-25M/S

General Semiconductor, Inc.

General Semiconductor, Inc. 28C04F-25M/S
  • ECCN
    3A001.a.2.c
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Technology
    CMOS
  • Toggle Bit
    NO
  • Data Polling
    YES
  • Memory Width
    8
  • Memory IC Type
    EEPROM
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    MILITARY
  • Memory Organization
    512X8
  • Number of Functions
    1
  • Access Time-Max (ns)
    250
  • Number of Words Code
    512
  • Memory Density (bits)
    4096
  • Command User Interface
    NO
  • Supply Voltage-Nom (V)
    5
  • Number of Words (words)
    512
  • Standby Current-Max (A)
    0.0001
  • Supply Current-Max (mA)
    30
  • Package Equivalence Code
    DIE OR CHIP
  • Endurance (Write/Erase Cycles)
    100000
  • Operating Temperature-Max (Cel)
    125
  • Operating Temperature-Min (Cel)
    -55
  • Write Cycle Time-Max (tWC) (ms)
    0.2
  • Screening Level / Reference Standard
    MIL-STD-883

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28C04F-25M/S
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28C04F-25M/S