1SS277
Hitachi, Ltd.
- Lifecycle statusDiscontinued
- DescriptionMixer Diode, Very High Frequency to Ultra High Frequency, Silicon
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.60
- SB Code8541.10.00.60
- Diode TypeMIXER DIODE
- TechnologyPLANAR DOPED BARRIER
- JESD-30 CodeO-LALF-W2
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleLONG FORM Meter
- Surface MountNO
- Terminal FormWIRE
- Frequency BandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
- Case ConnectionISOLATED
- Terminal PositionAXIAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Output Current-Max0.1 A
- Number of Terminals2
- Qualification StatusNot Qualified
- Diode Capacitance-Max1.2 pF
- Package Body MaterialGLASS
- Power Dissipation-Max0.1 W
- Diode Element MaterialSILICON
- Forward Voltage-Max (VF)1 V
- Operating Temperature-Max125 Cel
- Rep Pk Reverse Voltage-Max35 V
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1SS277