1NN70G-ML-K08-5060-R by UTC, Ltd. | Sourcengine

UTC, Ltd. 1NN70G-ML-K08-5060-R

Lifecycle status
Active-Unconfirmed
REACH
REACH compliant
Description
Power Field-Effect Transistor, 1A I(D), 700V, 8ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
700
Feedback Cap-Max (Crss) (pF)
3.2
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
20
Avalanche Energy Rating (Eas) (mJ)
30
Pulsed Drain Current-Max (IDM) (A)
2
Drain-source On Resistance-Max (ohm)
8