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1N5708

INTERNATIONAL SEMICONDUCTOR INC

INTERNATIONAL SEMICONDUCTOR INC 1N5708
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.10.00.80
  • SB Code
    8541.10.00.80
  • Diode Type
    VARIABLE CAPACITANCE DIODE
  • JESD-30 Code
    O-LALF-W2
  • Configuration
    SINGLE
  • JEDEC-95 Code
    DO-7
  • Package Shape
    ROUND
  • Package Style
    LONG FORM Meter
  • Surface Mount
    NO
  • Terminal Form
    WIRE
  • Case Connection
    ISOLATED
  • Terminal Position
    AXIAL
  • Additional Feature
    HIGH VOLTAGE
  • Number of Elements
    1
  • Quality Factor-Min
    175
  • Diode Cap Tolerance
    20 %
  • Number of Terminals
    2
  • Qualification Status
    Not Qualified
  • Breakdown Voltage-Min
    65 V
  • Diode Capacitance-Nom
    68 pF
  • Package Body Material
    GLASS
  • Power Dissipation-Max
    0.4 W
  • Diode Element Material
    SILICON
  • Rep Pk Reverse Voltage-Max
    60 V
  • Diode Capacitance Ratio-Min
    3.2

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1N5708
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1N5708