1N5699B by MSI ELECTRONICS INC | Sourcengine

MSI ELECTRONICS INC 1N5699B

Lifecycle status
Discontinued
Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 12pF C(T), 65V, Silicon, Abrupt
Category
Semiconductors Diodes Varactors VARIABLE CAPACITANCE DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
VARIABLE CAPACITANCE DIODE
JESD-30 Code
O-LALF-W2
Configuration
SINGLE
Package Shape
ROUND
Package Style
LONG FORM Meter
Surface Mount
NO
Terminal Form
WIRE
Frequency Band
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Case Connection
ISOLATED
Terminal Position
AXIAL
Additional Feature
SUPER Q
Number of Elements
1
Quality Factor-Min
400
Diode Cap Tolerance
5 %
Number of Terminals
2
Reverse Current-Max
2.0E-8 uA
Qualification Status
Not Qualified
Reverse Test Voltage
60 V
Breakdown Voltage-Min
65 V
Diode Capacitance-Nom
12 pF
Package Body Material
GLASS
Power Dissipation-Max
0.4 W
Diode Element Material
SILICON
Operating Temperature-Max
175 Cel
Rep Pk Reverse Voltage-Max
60 V
Diode Capacitance Ratio-Min
2.8
Variable Capacitance Diode Classification
ABRUPT