1N5554US
Microsemi Corporation
- Lifecycle statusTransferred
- DescriptionRectifier Diode, Avalanche, 1 Phase, 1 Element, 5A, 1000V V(RRM), Silicon
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.80
- SB Code8541.10.00.80
- Diode TypeRECTIFIER DIODE
- TechnologyAVALANCHE
- ApplicationPOWER
- JESD-30 CodeO-LELF-R2
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleLONG FORM Meter
- Surface MountYES
- Terminal FormWRAP AROUND
- J-STD-609 Codee0
- Case ConnectionISOLATED
- Terminal FinishTIN LEAD
- Number of Phases1
- DLA QualificationNot Qualified
- Terminal PositionEND
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals2
- Package Body MaterialGLASS
- Diode Element MaterialSILICON
- Output Current-Max (A)5
- Forward Voltage-Max (V)1.3
- Rep Pk Reverse Voltage-Max (V)1000
- Reverse Recovery Time-Max (us)2
- Operating Temperature-Max (Cel)175
- Non-rep Pk Forward Current-Max (A)100
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1N5554US