1N5475B
Microsemi Corporation
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionVariable Capacitance Diode, 82pF C(T), 30V, Silicon, Abrupt, DO-7
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.80
- SB Code8541.10.00.80
- Diode TypeVARIABLE CAPACITANCE DIODE
- JESD-30 CodeO-LALF-W2
- ConfigurationSINGLE
- JEDEC-95 CodeDO-7
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleLONG FORM Meter
- Surface MountNO
- Terminal FormWIRE
- Case ConnectionISOLATED
- Terminal FinishTIN LEAD
- Terminal PositionAXIAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Quality Factor-Min225
- Diode Cap Tolerance5 %
- Number of Terminals2
- Qualification StatusNot Qualified
- Breakdown Voltage-Min30 V
- Diode Capacitance-Nom82 pF
- Package Body MaterialGLASS
- Power Dissipation-Max0.4 W
- Diode Element MaterialSILICON
- Operating Temperature-Max175 Cel
- Diode Capacitance Ratio-Min2.9
- Variable Capacitance Diode ClassificationABRUPT
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1N5475B