1N4800B
KNOX SEMICONDUCTORS INC
- Lifecycle statusTransferred
- DescriptionVariable Capacitance Diode, 100pF C(T), 17V, Silicon, Abrupt, DO-7
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.80
- SB Code8541.10.00.80
- Diode TypeVARIABLE CAPACITANCE DIODE
- JESD-30 CodeO-LALF-W2
- ConfigurationSINGLE
- JEDEC-95 CodeDO-7
- Package ShapeROUND
- Package StyleLONG FORM Meter
- Surface MountNO
- Terminal FormWIRE
- J-STD-609 Codee0
- Case ConnectionISOLATED
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionAXIAL
- Number of Elements1
- Quality Factor-Min15
- Number of Terminals2
- Package Body MaterialGLASS
- Diode Element MaterialSILICON
- Diode Cap Tolerance (%)5
- Reverse Current-Max (uA)0.005
- Reverse Test Voltage (V)15
- Breakdown Voltage-Min (V)17
- Power Dissipation-Max (W)0.5
- Diode Capacitance-Nom (pF)100
- Diode Capacitance Ratio-Min2.24
- Rep Pk Reverse Voltage-Max (V)15
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-65
- Variable Capacitance Diode ClassificationABRUPT
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1N4800B