1N1611
ASI Semiconductor, Inc.
- Lifecycle statusActive
- DescriptionMixer Diode, Zero Barrier, X Band, 3100ohm Z(V) Max, Silicon, DO-22
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.60
- SB Code8541.10.00.60
- Diode TypeMIXER DIODE
- TechnologyPOINT CONTACT
- JESD-30 CodeO-LALF-W1
- ConfigurationSINGLE
- JEDEC-95 CodeDO-22
- Package ShapeROUND
- Package StyleLONG FORM Meter
- Surface MountNO
- Terminal FormWIRE
- Frequency BandX BAND
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionAXIAL
- Number of Elements1
- Impedance-Max (ohm)3100
- Impedance-Min (ohm)1700
- Number of Terminals1
- Package Body MaterialGLASS
- Diode Element MaterialSILICON
- Type of Schottky BarrierZERO BARRIER
- Operating Frequency-Max (GHz)12
- Operating Frequency-Min (GHz)8.2
- Operating Temperature-Max (Cel)70
- Tangential Signal Sensitivity-Min (dBm)51
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