1MBI50L-060
Fuji Electric Co., Ltd.
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max3.5 V
- JESD-30 CodeR-XUFM-X3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Additional FeatureHIGH SPEED
- Fall Time-Max (tf)350 ns
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Gate-emitter Voltage-Max20 V
- Collector Current-Max (IC)50 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
- Power Dissipation Ambient-Max200 W
0 suppliers available to buy or to bid for 1MBI50L-060
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
1MBI50L-060
Send an RFQ
1MBI50L-060