1MBI1200U4C-120 by Fuji Electric Co., Ltd. | Sourcengine

Fuji Electric Co., Ltd. 1MBI1200U4C-120

Lifecycle status
Discontinued
Description
Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.25 V
JESD-30 Code
R-XUFM-X7
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
7
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Turn-on Time-Nom (ton)
3100 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
1450 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
1200 A
Power Dissipation-Max (Abs)
7350 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V