1MBH70D-090A
Fuji Electric Co., Ltd.
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 70A I(C), 900V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal PositionSINGLE
- Additional FeatureHIGH SWITCHING SPEED, LOW SATURATION VOLTAGE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)300 ns
- Turn-off Time-Nom (toff)850 ns
- Collector Current-Max (IC)70 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max900 V
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1MBH70D-090A