1MB12-140
Fuji Electric Co., Ltd.
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 12A I(C), 1400V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max6 V
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal PositionSINGLE
- Fall Time-Max (tf)1000 ns
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)12 A
- Power Dissipation-Max (Abs)100 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1400 V
- Power Dissipation Ambient-Max100 W
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1MB12-140
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1MB12-140