12N60KG-MT-TM3-T by UTC, Ltd. | Sourcengine

UTC, Ltd. 12N60KG-MT-TM3-T

Lifecycle status
Active
Description
Power Field-Effect Transistor, 12A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
48
Drain Current-Max (ID) (A)
12
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
225
DS Breakdown Voltage-Min (V)
600
Feedback Cap-Max (Crss) (pF)
18
Turn-off Time-Max (toff) (ns)
340
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
420
Pulsed Drain Current-Max (IDM) (A)
48
Drain-source On Resistance-Max (ohm)
0.7