10NM70L-U2-TN3-R
UTC, Ltd.
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 10A I(D), 700V, 0.69ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologySUPERJUNCTION MOSFET
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)57
- Drain Current-Max (ID) (A)10
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)700
- Feedback Cap-Max (Crss) (pF)20
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)208
- Pulsed Drain Current-Max (IDM) (A)40
- Drain-source On Resistance-Max (ohm)0.69
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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10NM70L-U2-TN3-R