0912GN-50LEL
Microsemi Corporation
- Lifecycle statusTransferred
- REACHREACH compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeR-XDFM-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals2
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Power Gain-Min (Gp) (dB)15.2
- Transistor Element MaterialGALLIUM NITRIDE
- DS Breakdown Voltage-Min (V)150
- Operating Temperature-Max (Cel)200
- Power Dissipation Ambient-Max (W)100
0 suppliers available to buy or to bid for 0912GN-50LEL
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
0912GN-50LEL
Send an RFQ
0912GN-50LEL