0150SC-1250M
Microsemi Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-CDFM-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyJUNCTION
- J-STD-609 Codee0
- Operating ModeDEPLETION MODE
- Case ConnectionGATE
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals2
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Drain Current-Max (ID) (A)35
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)250
- Operating Temperature-Max (Cel)250
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0150SC-1250M
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0150SC-1250M