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MT49H8M36SJ-25E:B

Micron Technology

MT49H8M36SJ-25E:B Datasheet
Micron Technology MT49H8M36SJ-25E:B
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.28
  • SB Code
    8542.32.00.15
  • Technology
    CMOS
  • Width (mm)
    11.0000
  • Access Mode
    MULTI BANK PAGE BURST
  • Length (mm)
    18.5000
  • JESD-30 Code
    R-PBGA-B144
  • Memory Width
    36
  • Package Code
    TBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, THIN PROFILE
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e1
  • Memory IC Type
    DDR DRAM
  • Operating Mode
    SYNCHRONOUS
  • Number of Ports
    1
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Terminal Position
    BOTTOM
  • Additional Feature
    AUTO REFRESH
  • Memory Organization
    8MX36
  • Number of Functions
    1
  • Number of Terminals
    144
  • Terminal Pitch (mm)
    1.000
  • Number of Words Code
    8M
  • Memory Density (bits)
    301989888.0000000000000000
  • Package Body Material
    PLASTIC/EPOXY
  • Seated Height-Max (mm)
    1.2000
  • Supply Voltage-Max (V)
    1.90000
  • Supply Voltage-Min (V)
    1.70000
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    8388608.0000000000000000
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30

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