ZVN2535A
Diodes Incorporated
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionSmall Signal Field-Effect Transistor, 0.09A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-PBCY-W3
- ConfigurationSINGLE
- JESD-609 Codee3
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishMATTE TIN
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.09 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)4 pF
- DS Breakdown Voltage-Min350 V
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max35 ohm
- Time@Peak Reflow Temperature-Max (s)30
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ZVN2535A