UPD464636ALS1-A7
Renesas Electronics Corp.
- Lifecycle statusDiscontinued
- DescriptionLate-Write SRAM, 128KX36, 3.5ns, CMOS, PBGA119
- Category
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B119
- Memory Width36
- Package CodeBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee0
- Memory IC TypeLATE-WRITE SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Memory Organization128KX36
- Number of Terminals119
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)3.5
- Number of Words Code128K
- Memory Density (bits)4718592
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Nom (V)3.3
- Number of Words (words)131072
- Standby Current-Max (A)0.045
- Standby Voltage-Min (V)3.15
- Supply Current-Max (mA)670
- Package Equivalence CodeBGA119,7X17,50
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UPD464636ALS1-A7