TK15J50D(F)
Toshiba Corporation
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountNO
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)15 A
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)210 W
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
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TK15J50D(F)