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TK155U65Z,RQ(S

Toshiba Corporation

Toshiba Corporation TK155U65Z,RQ(S
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • JESD-30 Code
    R-PSSO-F8
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    FLAT
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Number of Terminals
    8
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID)
    18 A
  • Transistor Application
    SWITCHING
  • Feedback Cap-Max (Crss)
    1.6 pF
  • DS Breakdown Voltage-Min
    650 V
  • Operating Temperature-Max
    150 Cel
  • Power Dissipation-Max (Abs)
    150 W
  • Transistor Element Material
    SILICON
  • Avalanche Energy Rating (Eas)
    225 mJ
  • Drain-source On Resistance-Max
    0.155 ohm
  • Pulsed Drain Current-Max (IDM)
    72 A

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TK155U65Z,RQ(S
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TK155U65Z,RQ(S