TK155E65Z,S1X(S
Toshiba Corporation
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 18A I(D), 650V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
- Category
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)18 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)1.6 pF
- DS Breakdown Voltage-Min650 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)150 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)225 mJ
- Drain-source On Resistance-Max0.155 ohm
- Pulsed Drain Current-Max (IDM)72 A
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TK155E65Z,S1X(S