- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.75
- SB Code8541.21.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeO-PBCY-W3
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)30
- Power Dissipation-Max (W)0.25
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Collector Current-Max (IC) (A)0.03
- Operating Temperature-Max (Cel)175
- Collector-emitter Voltage-Max (V)45
- Power Dissipation Ambient-Max (W)0.25
- Transition Frequency-Nom (fT) (MHz)6.5
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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TIS128