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THM41002L-10

Toshiba Corporation

Toshiba Corporation THM41002L-10
  • ECCN
    3A991.b.2.a
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • I/O Type
    SEPARATE
  • Technology
    CMOS
  • Memory Width
    4
  • Surface Mount
    NO
  • J-STD-609 Code
    e0
  • Memory IC Type
    STATIC COLUMN DRAM
  • Refresh Cycles
    512
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    COMMERCIAL
  • Terminal Position
    SINGLE
  • Memory Organization
    1MX4
  • Number of Terminals
    25
  • Terminal Pitch (mm)
    2.54
  • Access Time-Max (ns)
    100
  • Number of Words Code
    1M
  • Memory Density (bits)
    4194304
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Supply Voltage-Nom (V)
    5
  • Number of Words (words)
    1048576
  • Supply Current-Max (mA)
    240
  • Package Equivalence Code
    SIP25,.2
  • Operating Temperature-Max (Cel)
    70
  • Operating Temperature-Min (Cel)
    0

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THM41002L-10
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THM41002L-10