TC55V16100FT-12
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionCache SRAM, 1MX16, 12ns, CMOS, PDSO54
- Category
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)10.16
- Length (mm)22.22
- JESD-30 CodeR-PDSO-G54
- Memory Width16
- Package CodeTSOP2
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee0
- Memory IC TypeCACHE SRAM
- Operating ModeASYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Memory Organization1MX16
- Number of Functions1
- Number of Terminals54
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)12
- Number of Words Code1M
- Memory Density (bits)16777216
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)3
- Supply Voltage-Nom (V)3.3
- Number of Words (words)1048576
- Standby Current-Max (A)0.004
- Standby Voltage-Min (V)3
- Supply Current-Max (mA)420
- Package Equivalence CodeTSOP54,.46,32
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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TC55V16100FT-12