TBB1005EMTL-H by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. TBB1005EMTL-H

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
RF N-CHANNEL MOSFET
Category
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G6
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DUAL GATE, DEPLETION MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
16
Power Dissipation-Max (W)
0.25
Drain Current-Max (ID) (A)
0.03
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
6
Feedback Cap-Max (Crss) (pF)
0.04
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED