STD3NM60N by STMicroelectronics N.V. | Sourcengine

STMicroelectronics N.V. STD3NM60N

Lifecycle status
Active
RoHS
RoHS compliant
Description
N-channel 600 V, 1.6 Ohm, 3.3 A MDmesh(TM) II Power MOSFET in DPAK package
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
3.3
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Peak Reflow Temperature (Cel)
260
Avalanche Energy Rating (Eas) (mJ)
86
Pulsed Drain Current-Max (IDM) (A)
13
Drain-source On Resistance-Max (ohm)
1.8
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED