SSM6L09FUTE85LF
Toshiba Corporation
- Lifecycle statusNRFND
- RoHSRoHS compliant
- DescriptionTrans MOSFET N/P-CH Si 30V 0.4A/0.2A 6-Pin US T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G6
- ConfigurationN and P-Channel
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Power Dissipation-Max (W)0.3
- Drain Current-Max (ID) (A)0.4
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Feedback Cap-Max (Crss) (pF)7
- Operating Temperature-Max (Cel)150
- Drain-source On Resistance-Max (ohm)1.7
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SSM6L09FUTE85LF