SQJ423EP-T1_GE3
Vishay Intertechnology, Inc.
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionMOSFET P-CH 40V 55A PPAK SO-8
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Reference StandardAEC-Q101
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)55 A
- DS Breakdown Voltage-Min40 V
- Operating Temperature-Max175 Cel
- Operating Temperature-Min-55 Cel
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)80 mJ
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.014 ohm
- Pulsed Drain Current-Max (IDM)100 A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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SQJ423EP-T1_GE3