SH8MA2GZETB
ROHM Semiconductor
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET N/P-CH 30V 4.5A 8SOP
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- ConfigurationN and P-Channel
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin (Sn)
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)1.1
- Pulsed Drain Current-Max (IDM) (A)12
- Drain-source On Resistance-Max (ohm)0.08
- Time@Peak Reflow Temperature-Max (s)30
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