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Q65112A1150

OSRAM Opto Semiconductors GmbH.

OSRAM Opto Semiconductors GmbH. Q65112A1150
  • Shape
    ROUND
  • Size (mm)
    2
  • Configuration
    SINGLE WITH BUILT-IN PHOTO DIODE
  • Packing Method
    TRAY
  • Mounting Feature
    RADIAL MOUNT
  • Number of Functions
    1
  • Peak Wavelength (nm)
    850
  • Output Power-Nom (mW)
    200
  • Forward Current-Max (A)
    0.26
  • Forward Voltage-Max (V)
    2.2
  • Optoelectronic Device Type
    LASER DIODE
  • Threshold Current-Max (mA)
    85
  • Operating Temperature-Max (Cel)
    60
  • Operating Temperature-Min (Cel)
    -20

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Q65112A1150
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Q65112A1150