PHP191NQ06LT,127
Nexperia BV
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionN-channel TrenchMOS logic level FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN
- Terminal PositionSINGLE
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)75 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min55 V
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)560 mJ
- Drain-source On Resistance-Max0.0044 ohm
- Pulsed Drain Current-Max (IDM)240 A
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