PHN210T,118
Nexperia BV
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionDual N-channel TrenchMOS intermediate level FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G8
- Configuration2 N-Channel (Dual)
- JEDEC-95 CodeMS-012AA
- JESD-609 Codee4
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishNICKEL PALLADIUM GOLD
- Terminal PositionDUAL
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements2
- Number of Terminals8
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)3.4 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30 V
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)13 mJ
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.1 ohm
- Pulsed Drain Current-Max (IDM)14 A
- Time@Peak Reflow Temperature-Max (s)30
0 suppliers available to buy or to bid for PHN210T,118
Send an RFQ
Send an RFQ
Negotiated savings, bought with a click.
Send an RFQ
PHN210T,118